Everspin Technologies
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$301.48M
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Everspin Technologies, Inc. engages in the provision of magnetoresistive random access memory (MRAM) solutions. The company is headquartered in Chandler, Arizona and currently employs 85 full-time employees. The company went IPO on 2016-10-07. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. The company offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
Everspin Technologies shares increased after reporting strong first-quarter financial results, surpassing expectations, as announced post-market on Wednesday.
Everspin Technologies, Inc. engages in the provision of magnetoresistive random access memory (MRAM) solutions. The company is headquartered in Chandler, Arizona and currently employs 85 full-time employees. The company went IPO on 2016-10-07. Its MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM offers products with industry-standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. The company offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.
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